SeriesCoolMOS™ CFD2
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs340mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V
FET Feature-
Power Dissipation (Max)104.2W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-VSON-4-1
Package / Case4-PowerTSFN

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