SeriesDirectFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs3.7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1590 pF @ 13 V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 32W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDirectFET™ Isometric SQ
Package / CaseDirectFET™ Isometric SQ

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