SeriesNexFET™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 113A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9 nC @ 4.5 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 12.5 V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSON-CLIP (5x6)
Package / Case8-PowerTDFN

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