SeriesQFET®
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 2.35A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds780 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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