Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 24 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

RELATED PRODUCT

N0600N-S17-AY
MOSFET N-CH 60V 30A TO220
UPA2726UT1A-E1-AY
MOSFET N-CH 30V 20A 8DFN
NIF9N05CLT1G
MOSFET N-CH 59V 2.6A SOT223
RFP2P10
P-CHANNEL POWER MOSFET
SPB02N60C3
N-CHANNEL POWER MOSFET
HUF75307D3
MOSFET N-CH 55V 15A IPAK
BSC240N12NS3G
N-CHANNEL POWER MOSFET
ATP203-TL-H
MOSFET N-CH 30V 75A DPAK/ATPAK
NIF9N05CLT3G-SY
2.6 A, 52 V, N-CHANNEL, LOGIC LE
NTMFS4122NT1G
MOSFET N-CH 30V 9.1A 5DFN