SeriesFETKY™
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs140mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.14W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DFN (3x3)
Package / Case6-VDFN Exposed Pad

RELATED PRODUCT

NDD03N80ZT4G
MOSFET N-CH 800V 2.9A DPAK-3
NVMFS5C442NLT1G
MOSFET N-CH 40V 28A/130A 5DFN
NTMFS4707NT1G
MOSFET N-CH 30V 6.9A 5DFN
SPS02N60C3BKMA1
MOSFET N-CH 600V 1.8A TO251-31
RJK03K0DPA-00#J5A
N-CHANNEL POWER SWITCHING MOSFET
NTMFS4935NBT1G
MOSFET N-CH 30V 13A/93A 5DFN
HUF76121P3
N-CHANNEL POWER MOSFET
BUZ73A
MOSFET N-CH 200V 5.5A TO220-3
2SK2111-T1-AZ
SMALL SIGNAL N-CHANNEL MOSFET
RFP14N05L
MOSFET N-CH 50V 14A TO220-3