Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs10.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1.11 pF @ 10 V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WPAK
Package / Case8-PowerWDFN

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