Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2.59 pF @ 10 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HWSON (3.3x3.3)
Package / Case8-PowerWDFN

RELATED PRODUCT

NTMFS4839NT1G
MOSFET N-CH 30V 9.5A/64A 5DFN
IRFR430BTM
N-CHANNEL POWER MOSFET
BSP171PL6327HTSA1
MOSFET P-CH 60V 1.9A SOT223-4
RJK0397DPA-00#J53
MOSFET N-CH 30V 30A 8WPAK
BSC119N03MSCG
N-CHANNEL POWER MOSFET
NDT01N60T1G
MOSFET N-CH 600V 400MA SOT223
NTP85N03
MOSFET N-CH 28V 85A TO220AB
FDS9412
MOSFET N-CH 30V 7.9A 8SOIC
RJK03B8DPA-00#J53
MOSFET N-CH 30V 30A 8WPAK