SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs150mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.2 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds369 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)960mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6

RELATED PRODUCT

MMFT3055ET1
SMALL SIGNAL N-CHANNEL MOSFET
MTD2N50E1
TRANS MOSFET N-CH 500V 2A RAIL
SSR1N60BTF
N-CHANNEL POWER MOSFET
NTMS4873NFR2G
MOSFET N-CH 30V 7.1A 8SOIC
NTLUS3A40PZCTAG
MOSFET P-CH 20V 4A 6UDFN
FQD4N25TM
MOSFET N-CH 250V 3A DPAK
FDZ293P
MOSFET P-CH 20V 4.6A 9BGA
RFD3055LESM
MOSFET N-CH 60V 11A TO252AA
NTTFS4823NTWG
MOSFET N-CH 30V 7.1A/50A 8WDFN