Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds921 pF @ 12 V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

RELATED PRODUCT

NTD15N06LT4
MOSFET N-CH 60V 15A DPAK
NTTS2P02R2
MOSFET P-CH 20V 2.4A MICRO8
MMFT2N25ET3
SMALL SIGNAL N-CHANNEL MOSFET
SSP1N60B
N-CHANNEL POWER MOSFET
EMH1307-TL-H
MOSFET P-CH 20V 6.5A 8EMH
IRLI610ATU
MOSFET N-CH 200V 3.3A I2PAK
CPH3439-TL-E
N-CHANNEL SILICON MOSFET
PH8230E,115
POWER FIELD-EFFECT TRANSISTOR, 6