Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs52mOhm @ 2A, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-MCPH
Package / Case3-SMD, Flat Lead

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