Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds694 pF @ 12 V
FET Feature-
Power Dissipation (Max)34W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

RELATED PRODUCT

NTR4503NT3G
MOSFET N-CH 30V 1.5A SOT23-3
NTB23N03R
MOSFET N-CH 25V 23A D2PAK
2SK160A(1)-T1B-A
SMALL SIGNAL N-CHANNEL MOSFET
2SK160A-L-A
SMALL SIGNAL N-CHANNEL MOSFET
NTF3055-160T3
N-CHANNEL POWER MOSFET
NTD70N03R-001
MOSFET N-CH 25V 10A/32A IPAK
MMFT1N10ET3
SMALL SIGNAL N-CHANNEL MOSFET
SSS1N60B
N-CHANNEL POWER MOSFET
NTD4810NH-1G
MOSFET N-CH 30V 9A/54A IPAK
NTHS4501NT1
MOSFET N-CH 30V 4.9A CHIPFET