Series-
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs137mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs3.3 nC @ 4.5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 10 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-CPH
Package / CaseTO-236-3, SC-59, SOT-23-3

RELATED PRODUCT

NTD23N03R-1G
MOSFET N-CH 25V 3.8A/17.1A IPAK
IPU60R3K4CEAKMA1
MOSFET N-CH 600V 2.6A TO251-3
2SJ451ZK-TL-E
P-CHANNEL SMALL SIGNAL MOSFET
PMPB16XNEA115
N-CHANNEL POWER MOSFET
RM3407
MOSFET P-CHANNEL 30V 4.3A SOT23
MCH5839-TL-W
MOSFET P-CH 20V 1.5A SC88AFL
NTD40N03RT4
MOSFET N-CH 25V 7.8A/32A DPAK
CPH3456-TL-H
MOSFET N-CH 20V 3.5A 3CPH
SI3948DV
SMALL SIGNAL N-CHANNEL MOSFET