SeriesTrenchMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs117mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds195 pF @ 10 V
FET Feature-
Power Dissipation (Max)830mW (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB
Package / CaseTO-236-3, SC-59, SOT-23-3

RELATED PRODUCT

PMN38EN,135
MOSFET N-CH 30V 5.4A 6TSOP
2SJ463A(91)-T1-A
SMALL SIGNAL P-CHANNEL MOSFET
BSL716SNH6327XTSA1
MOSFET N-CH 75V 2.5A TSOP6-6
IPU50R2K0CEBKMA1
MOSFET N-CH 500V 2.4A TO251-3
MTD6N20E1
N-CHANNEL POWER MOSFET
PMV170UN,215
MOSFET N-CH 20V 1A TO236AB
2SJ463A(0)-T1-AT
SMALL SIGNAL P-CHANNEL MOSFET
3SK295ZQ-TL-E
SMALL SIGNAL N-CHANNEL MOSFET
SCH1435-TL-H
SMALL SIGNAL N-CHANNEL MOSFET
SSU1N60BTU
N-CHANNEL POWER MOSFET