Series-
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs150mOhm @ 1A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs3.9 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds172 pF @ 10 V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-SCH
Package / CaseSOT-563, SOT-666

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