Series-
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1.65A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 5 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6

RELATED PRODUCT

5HP02M-TL-E
P-CHANNEL SMALL SIGNAL MOSFET
2N7002BKV/DG/B2115
N-CHANNEL SMALL SIGNAL MOSFET
2SK1839-TL-E
NCH 0.1A 30V MOSFET
BSD214SNL6327
SMALL SIGNAL N-CHANNEL MOSFET
PMT760EN,135
MOSFET N-CH 100V 900MA SOT223
2SK2552B-T1-AT
N-CHANNEL SMALL SIGNAL MOSFET
2N7002BKS/DG/B2115
N-CHANNEL SMALL SIGNAL MOSFET