Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs600 pC @ 2.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 10 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT363-6
Package / Case6-VSSOP, SC-88, SOT-363

RELATED PRODUCT

BF2030-E6327
RF N-CHANNEL MOSFET
FDV301N
MOSFET N-CH 25V 220MA SOT23
PMT760EN,115
MOSFET N-CH 100V 900MA SOT223
PMF3800SN,115
MOSFET N-CH 60V 260MA SC70
NX7002BKXB147
SMALL SIGNAL N-CHANNEL MOSFET
MMBF2202PT1
MOSFET P-CH 20V 300MA SC70-3