SeriesPowerMESH™ II
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs430 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11100 pF @ 25 V
FET Feature-
Power Dissipation (Max)460W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseISOTOP

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