SeriesCoolMOS™
PackageTube
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 100 V
FET Feature-
Power Dissipation (Max)151W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

RELATED PRODUCT

STW10N105K5
MOSFET N-CH 1050V 6A TO247
IRFSL11N50APBF
MOSFET N-CH 500V 11A TO262-3
SIHA22N60AE-E3
MOSFET N-CHANNEL 600V 20A TO220
SUM50010E-GE3
MOSFET N-CH 60V 150A TO263
SIHG25N40D-GE3
MOSFET N-CH 400V 25A TO247AC
SIHG180N60E-GE3
MOSFET N-CH 600V 19A TO247AC
STF19NM50N
MOSFET N-CH 500V 14A TO220FP
IRFPE40PBF
MOSFET N-CH 800V 5.4A TO247-3
TSM60NB190CZ C0G
MOSFET N-CHANNEL 600V 18A TO220
STH240N75F3-6
MOSFET N-CH 75V 180A H2PAK-6