SeriesDTMOSIV
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 300 V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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