Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs136 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6460 pF @ 75 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 500W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

RELATED PRODUCT

STP20N95K5
MOSFET N-CH 950V 17.5A TO220-3
IXTQ52N30P
MOSFET N-CH 300V 52A TO3P
NVB082N65S3F
MOSFET N-CH 650V 40A D2PAK-3
IXFP34N65X2
MOSFET N-CH 650V 34A TO220AB
STW20NM60
MOSFET N-CH 600V 20A TO247-3
STP11NM80
MOSFET N-CH 800V 11A TO220AB
IRFSL3006PBF
MOSFET N-CH 60V 195A TO262
FQA55N25
MOSFET N-CH 250V 55A TO3PN
STW32NM50N
MOSFET N CH 500V 22A TO-247