SeriesHiPerFET™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300 V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19mOhm @ 36A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5.4 nF @ 25 V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AA
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

FCA47N60
MOSFET N-CH 600V 47A TO3PN
SIHG47N60AE-GE3
MOSFET N-CH 600V 43A TO247AC
IRFP32N50KPBF
MOSFET N-CH 500V 32A TO247-3
STB42N65M5
MOSFET N-CH 650V 33A D2PAK
IXTH30N60P
MOSFET N-CH 600V 30A TO247
STW12N120K5
MOSFET N-CH 1200V 12A TO247
IXFH56N30X3
MOSFET N-CH 300V 56A TO247
IPW60R099CPFKSA1
MOSFET N-CH 650V 31A TO247-3