SeriesQFET®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs285 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds7900 pF @ 25 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

RELATED PRODUCT

FDH3632
MOSFET N-CH 100V 12A/80A TO247-3
FQA65N20
MOSFET N-CH 200V 65A TO3PN
IXTA44P15T
MOSFET P-CH 150V 44A TO263
STP45N40DM2AG
MOSFET N-CH 400V 38A TO220
IXFY30N25X3
MOSFET N-CH 250V 30A TO252AA
IXTP52P10P
MOSFET P-CH 100V 52A TO220AB
SUP90P06-09L-E3
MOSFET P-CH 60V 90A TO220AB
STFW4N150
MOSFET N-CH 1500V 4A ISOWATT
IPW60R080P7XKSA1
MOSFET N-CH 600V 37A TO247-3