Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1020 pF @ 25 V
FET FeatureDepletion Mode
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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