SeriesMESH OVERLAY™ II
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

RELATED PRODUCT

IRFZ48NPBF
MOSFET N-CH 55V 64A TO220AB
CSD18532NQ5B
MOSFET N-CH 60V 22A/100A 8VSON
IPA60R360P7SXKSA1
MOSFET N-CH 600V 9A TO220
STP7N60M2
MOSFET N-CH 600V 5A TO220
IRFD220PBF
MOSFET N-CH 200V 800MA 4DIP
FDMC013P030Z
MOSFET P-CHANNEL 30V 54A 8MLP
IRF1010EPBF
MOSFET N-CH 60V 84A TO220AB
FDMS86101A
MOSFET N-CH 100V 13A/60A 8PQFN
FDPF3860T
MOSFET N-CH 100V 20A TO220F
SQJQ466E-T1_GE3
MOSFET N-CH 60V 200A PPAK 8 X 8