Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs62mOhm @ 6A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 20 V
FET Feature-
Power Dissipation (Max)1W (Ta), 15W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTP
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

IRL530NPBF
MOSFET N-CH 100V 17A TO220AB
IPS70R360P7SAKMA1
MOSFET N-CH 700V 12.5A TO251-3
VN3205N8-G
MOSFET N-CH 50V 1.5A TO243AA
IRF9Z34STRLPBF
MOSFET P-CH 60V 18A D2PAK
FQU2N100TU
MOSFET N-CH 1000V 1.6A IPAK
FQPF11P06
MOSFET P-CH 60V 8.6A TO220F
BUK768R1-100E,118
MOSFET N-CH 100V 100A D2PAK
STD17NF25
MOSFET N-CH 250V 17A DPAK
TN0604N3-G
MOSFET N-CH 40V 700MA TO92-3
AON6242
MOSFET N-CH 60V 18.5A/85A 8DFN