SeriesHEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 29A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1360 pF @ 25 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

SI4896DY-T1-GE3
MOSFET N-CH 80V 6.7A 8SO
SI4896DY-T1-E3
MOSFET N-CH 80V 6.7A 8SO
FDMS86252
MOSFET N-CH 150V 4.6A/16A 8PQFN
PHP23NQ11T,127
MOSFET N-CH 110V 23A TO220AB
BS170P
MOSFET N-CH 60V 270MA TO92-3
TN0106N3-G
MOSFET N-CH 60V 350MA TO92-3
PSMN013-100BS,118
MOSFET N-CH 100V 68A D2PAK
FDMS86182
MOSFET N-CH 100V 78A 8PQFN