SeriesHEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

RELATED PRODUCT

SI8499DB-T2-E1
MOSFET P-CH 20V 16A 6MICRO FOOT
RQ5L030SNTL
MOSFET N-CH 60V 3A TSMT3
FDC855N
MOSFET N-CH 30V 6.1A SUPERSOT6
SIA436DJ-T1-GE3
MOSFET N-CH 8V 12A PPAK SC70-6
DMN1054UCB4-7
MOSFET N-CH 8V 2.7A X1-WLB0808-4
SI4128DY-T1-GE3
MOSFET N-CH 30V 10.9A 8SO
FDS8880
MOSFET N-CH 30V 11.6A 8SOIC
IRFHS9301TRPBF
MOSFET P-CH 30V 6A/13A 6PQFN
SQ3419AEEV-T1_GE3
MOSFET P-CHANNEL 40V 6.9A 6TSOP
SIA446DJ-T1-GE3
MOSFET N-CH 150V 7.7A PPAK SC70