SeriesHEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6

RELATED PRODUCT

SIA459EDJ-T1-GE3
MOSFET P-CH 20V 9A PPAK SC70-6
SQ2351ES-T1_GE3
MOSFET P-CH 20V 3.2A SOT23-3
SQ2315ES-T1_GE3
MOSFET P-CH 12V 5A SOT23-3
SQ1470AEH-T1_GE3
MOSFET N-CH 30V 1.7A SOT363 SC70
SQ1440EH-T1_GE3
MOSFET N-CH 60V 1.7A SC70-6
SI2319DDS-T1-GE3
MOSFET P-CH 40V 2.7A/3.6A SOT23
PSMN9R5-30YLC,115
MOSFET N-CH 30V 44A LFPAK56
FDN342P
MOSFET P-CH 20V 2A SUPERSOT3
SI2399DS-T1-GE3
MOSFET P-CH 20V 6A SOT23-3
SIB456DK-T1-GE3
MOSFET N-CH 100V 6.3A PPAK SC75