Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450 V
Current - Continuous Drain (Id) @ 25°C75mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

RELATED PRODUCT

SIA413DJ-T1-GE3
MOSFET P-CH 12V 12A PPAK SC70-6
SIA414DJ-T1-GE3
MOSFET N-CH 8V 12A PPAK SC70-6
SIA456DJ-T1-GE3
MOSFET N-CH 200V 2.6A PPAK SC70
IRLL2705TRPBF
MOSFET N-CH 55V 3.8A SOT223
FDMA8878
MOSFET N-CH 30V 9A/10A 6MICROFET
BSC110N06NS3GATMA1
MOSFET N-CH 60V 50A TDSON-8
IRF7416TRPBF
MOSFET P-CH 30V 10A 8SO
FDMA905P
MOSFET P-CH 12V 10A 6MICROFET
BSZ0506NSATMA1
MOSFET N-CH 30V 15A/40A TSDSON
CSD19538Q3AT
MOSFET N-CH 100V 15A 8VSON