Series-
PackageBulk
Part StatusActive
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C78A (Tc)
Rds On (Max) @ Id, Vgs33mOhm @ 60A, 20V
Vgs(th) (Max) @ Id2.2V @ 3mA (Typ)
Gate Charge (Qg) (Max) @ Vgs148nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds2850pF @ 1000V
Power - Max370W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6-P