SeriesPOWER MOS 8™
PackageBulk
Part StatusObsolete
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C51A
Rds On (Max) @ Id, Vgs78mOhm @ 42A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs340nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds10800pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

RELATED PRODUCT

APTML1002U60R020T3AG
MOSFET 2N-CH 1000V 20A SP3
APTML102UM09R004T3AG
MOSFET 2N-CH 100V 154A SP3
APTML202UM18R010T3AG
MOSFET 2N-CH 200V 109A SP3
APTML502UM90R020T3AG
MOSFET 2N-CH 500V 52A SP3
APTC60DDAM45CT1G
MOSFET 2N-CH 600V 49A SP1
APTC60DDAM70CT1G
MOSFET 2N-CH 600V 39A SP1
APTC60DSKM45CT1G
MOSFET 2N-CH 600V 49A SP1
APTC60DSKM70CT1G
MOSFET 2N-CH 600V 39A SP1
APTC90H12SCTG
MOSFET 4N-CH 900V 30A SP4
APTC90AM60SCTG
MOSFET 2N-CH 900V 59A SP4