| Series | GigaMOS™, HiPerFET™, TrenchT2™ |
| Package | Tube |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 53A |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600pF @ 25V |
| Power - Max | 180W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Supplier Device Package | ISOPLUS i4-PAC™ |
