Series-
PackageBulk
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C43A
Rds On (Max) @ Id, Vgs210mOhm @ 21.5A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs372nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds10400pF @ 25V
Power - Max780W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP4
Supplier Device PackageSP4

RELATED PRODUCT

APTM100DUM90G
MOSFET 2N-CH 1000V 78A SP6
APTM100H80FT1G
MOSFET 4N-CH 1000V 11A SP1
APTM100TDU35PG
MOSFET 6N-CH 1000V 22A SP6-P
APTM10DDAM09T3G
MOSFET 2N-CH 100V 139A SP3
APTM10DDAM19T3G
MOSFET 2N-CH 100V 70A SP3
APTM10DHM09TG
MOSFET 2N-CH 100V 139A SP4
APTM10DUM05TG
MOSFET 2N-CH 100V 278A SP4
APTM10HM09FTG
MOSFET 4N-CH 100V 139A SP4
APTM10TDUM09PG
MOSFET 6N-CH 100V 139A SP6-P
APTM10TDUM19PG
MOSFET 6N-CH 100V 70A SP6-P