SeriesHiPerFET™
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C84A
Rds On (Max) @ Id, Vgs25mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs450nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds15000pF @ 25V
Power - Max370W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseY4-M6
Supplier Device PackageY4-M6

RELATED PRODUCT

VWM200-01P
MOSFET 6N-CH 100V 210A V2
VWM350-0075P
MOSFET 6N-CH 75V 340A V2
SI1016X-T1-E3
MOSFET N/P-CH 20V SOT563F
SI1023X-T1-E3
MOSFET 2P-CH 20V 0.37A SOT563F
SI1024X-T1-E3
MOSFET 2N-CH 20V 0.485A SOT563F
SI1025X-T1-E3
MOSFET 2P-CH 60V 0.19A SOT563F
SI1026X-T1-E3
MOSFET 2N-CH 60V 0.305A SOT563F
SI1029X-T1-E3
MOSFET N/P-CH 60V SOT563F
SI1033X-T1-E3
MOSFET 2P-CH 20V 0.145A SOT563F
SI1034X-T1-E3
MOSFET 2N-CH 20V 0.18A SOT563F