Series-
PackageBulk
Part StatusActive
FET Type2 N Channel (Phase Leg)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 50A, 20V
Vgs(th) (Max) @ Id2.3V @ 2.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs190nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds3080pF @ 1000V
Power - Max350W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP1
Supplier Device PackageSP1

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