Series-
PackageBulk
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C150A
Rds On (Max) @ Id, Vgs28mOhm @ 75A, 10V
Vgs(th) (Max) @ Id5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs434nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds19600pF @ 25V
Power - Max1250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6