Series-
PackageBulk
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C90A
Rds On (Max) @ Id, Vgs45mOhm @ 45A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds11200pF @ 25V
Power - Max694W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP4
Supplier Device PackageSP4