SeriesHEXFET®
PackageTube
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A, 12A
Rds On (Max) @ Id, Vgs13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

RELATED PRODUCT

FDD9409
N CHANNEL POWER TRENCH MOSFET,
RFD3055RLESM9A
12A, 60V, 0.15OHM, N-CHANNEL,
IPG20N06S2L65AATMA1
MOSFET 2N-CH 55V 20A 8TDSON
NDS9959
N-CHANNEL POWER MOSFET
BUK9K35-60RAX
BUK9K35-60RA/SOT1205/LFPAK56D
CSD75211W1723
P-CHANNEL POWER MOSFET
QH8JB5TCR
-40V DUAL PCH+PCH SMALL SIGNAL M
QH8JC5TCR
-60V DUAL PCH+PCH SMALL SIGNAL M
TSM110NB04DCR RLG
DUAL N-CHANNEL POWER MOSFET 40V,