SeriesAutomotive, AEC-Q101, HEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C5.1A
Rds On (Max) @ Id, Vgs50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
Power - Max2.4W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

RELATED PRODUCT

BSC0910NDIATMA1
MOSFET 2N-CH 25V 16A/31A TISON8
AUIRF7342QTR
MOSFET 2P-CH 55V 3.4A 8SOIC
NTMFD4C86NT3G
NTMFD4C86N - POWERPHASE, DUAL N-
AUIRFN8459TR
MOSFET 2N-CH 40V 50A 8PQFN
AUIRF7316QTR
MOSFET 2P-CH 30V 4.9A 8SOIC
SD5401CY SOIC 14L
QUAD HIGH SPEED N-CHANNEL LATERA
SD5000N PDIP 16L
QUAD HIGH SPEED N-CHANNEL LATERA
SD5400CY SOIC 14L
QUAD HIGH SPEED N-CHANNEL LATERA
FPF1C2P5BF07A
INSULATED GATE BIPOLAR TRANSISTO
BSM300D12P2E001
MOSFET 2N-CH 1200V 300A