DF23MR12W1M1PB11BPSA1

SeriesEasyPACK™
PackageTray
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C25A (Tj)
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds1840pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY1B-2

RELATED PRODUCT

ICL7667MJA/883B
DUAL MARKED (5962-8766001PA)
MRF21125R3
RF S BAND, N-CHANNEL
ICL7667MTV/883B
DUAL MARKED (5962-8766001GC)
MRF7S15100HSR3128
N CHANNEL ENHANCEMENT-MODE RF PO
MHT1000HR5178
N CHANNEL ENHANCEMENT-MODE RF PO
MRF6VP2600HR5,178
LATERAL N-CHANNEL BROADBAND RF
BLA6H1011-600
RF PFET, 2-ELEMENT, L BAND, SILI