Series-
PackageBulk
Part StatusObsolete
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.2A, 1.8A
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 20V
Power - Max2W
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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