Series-
PackageBulk
Part StatusObsolete
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.3A
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds531pF @ 10V
Power - Max710mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Supplier Device Package6-WDFN (2x2)

RELATED PRODUCT

FDMC0205
N-CHANNEL POWER TRENCH MOSFET
NTLJD3183CZTBG
SMALL SIGNAL P-CHANNEL MOSFET
FDC655N
N-CHANNEL, MOSFET
PMDPB70EN,115
PMDPB70EN - SMALL SIGNAL, HUSON6
CPH3307-TL-E
P-CHANNEL SILICON MOSFET
NTQD6968NR2
N-CHANNEL POWER MOSFET
ECH8411-TL-E-SA
N-CHANNEL SILICON MOSFET
NTMD2C02R2SG
P-CHANNEL POWER MOSFET