SeriesOptiMOS™
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.1A
Rds On (Max) @ Id, Vgs70mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds419pF @ 10V
Power - Max500mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackagePG-TSOP-6-6

RELATED PRODUCT

IRFN214BTA
IRFN214B - 250V N-CHANNEL MOSFET
NTLUD3191PZTAG
SMALL SIGNAL P-CHANNEL MOSFET
NTLUD3191PZTBG
SMALL SIGNAL P-CHANNEL MOSFET
ECH8601M-TL-H
N-CHANNEL POWER MOSFET
NTLJD3181PZTBG
SMALL SIGNAL P-CHANNEL MOSFET
SMC6280P
SMC6280 - N-CHANNEL POWER MOSFET
SI1902DL-T1-BE3
MOSFET 2N-CH 20V 0.66A SC-70-6
CPH3407-TL-E
N-CHANNEL SILICON MOSFET
EFC4630R-TR
POWER FIELD-EFFECT TRANSISTOR