SeriesBIMOSFET™
PackageTube
Part StatusNot For New Designs
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)3600 V
Current - Collector (Ic) (Max)70 A
Current - Collector Pulsed (Icm)220 A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Power - Max430 W
Switching Energy15.5mJ (on), 4.3mJ (off)
Input TypeStandard
Gate Charge110 nC
Td (on/off) @ 25°C18ns/238ns
Test Condition1500V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)1.7 µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268